Faculty Profiles

Aaron D. Franklin
Associate Professor of Chemistry
Office: 
CIEMAS 3473, Durham, NC 27708
Phone: 
(919) 681-9471

Overview

Education:

Ph.D., Purdue University 2008

B.S.E., Arizona State University 2004

Andrews, Joseph B., et al. “Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.Acs Nano, vol. 12, no. 6, June 2018, pp. 5482–88. Epmc, doi:10.1021/acsnano.8b00909. Full Text

Najmaei, Sina, et al. “Cross-Plane Carrier Transport in Van der Waals Layered Materials.Small (Weinheim an Der Bergstrasse, Germany), vol. 14, no. 20, May 2018, p. e1703808. Epmc, doi:10.1002/smll.201703808. Full Text

Lin, Y. C., et al. “Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers.” Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, vol. 36, no. 1, Jan. 2018. Scopus, doi:10.1116/1.5002558. Full Text

Franklin, A. D., et al. “75 years of the Device Research Conference - A history worth repeating.” Ieee Journal of the Electron Devices Society, vol. 6, no. 1, Dec. 2017, pp. 116–20. Scopus, doi:10.1109/JEDS.2017.2780778. Full Text

Liu, J., et al. “Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes.” Energy and Environmental Science, vol. 10, no. 11, Nov. 2017, pp. 2365–71. Scopus, doi:10.1039/c7ee02272g. Full Text

McGuire, Felicia A., et al. “Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors.Nano Letters, vol. 17, no. 8, Aug. 2017, pp. 4801–06. Epmc, doi:10.1021/acs.nanolett.7b01584. Full Text

Andrews, J. B., et al. “Noninvasive material thickness detection by aerosol jet printed sensors enhanced through metallic carbon nanotube ink.” Ieee Sensors Journal, vol. 17, no. 14, July 2017, pp. 4612–18. Scopus, doi:10.1109/JSEN.2017.2710085. Full Text

Catenacci, M. J., et al. “Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites.” Journal of Electronic Materials, vol. 46, no. 7, July 2017, pp. 4596–603. Scopus, doi:10.1007/s11664-017-5445-5. Full Text

Price, Katherine M., et al. “Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition.Acs Applied Materials & Interfaces, vol. 9, no. 27, July 2017, pp. 23072–80. Epmc, doi:10.1021/acsami.7b00538. Full Text

Cao, C., et al. “Completely Printed, Flexible, Stable, and Hysteresis-Free Carbon Nanotube Thin-Film Transistors via Aerosol Jet Printing.” Advanced Electronic Materials, vol. 3, no. 5, May 2017. Scopus, doi:10.1002/aelm.201700057. Full Text

Pages

Franklin, A. D. “Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics.” Digest of Technical Papers  Symposium on Vlsi Technology, 2017, pp. T44–45. Scopus, doi:10.23919/VLSIT.2017.7998194. Full Text

Cheng, Z., et al. “Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs.” Device Research Conference  Conference Digest, Drc, vol. 2016-August, 2016. Scopus, doi:10.1109/DRC.2016.7548484. Full Text

Franklin, A. D., and W. Haensch. “Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors.” Device Research Conference  Conference Digest, Drc, 2014, pp. 191–92. Scopus, doi:10.1109/DRC.2014.6872362. Full Text

Franklin, A. D., et al. “Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around.” Technical Digest  International Electron Devices Meeting, Iedm, 2012. Scopus, doi:10.1109/IEDM.2012.6478979. Full Text

Franklin, A. D., et al. “Sub-10 nm carbon nanotube transistor.” Technical Digest  International Electron Devices Meeting, Iedm, 2011. Scopus, doi:10.1109/IEDM.2011.6131600. Full Text

Han, S. J., et al. “Graphene technology with inverted-T gate and RF passives on 200 mm platform.” Technical Digest  International Electron Devices Meeting, Iedm, 2011. Scopus, doi:10.1109/IEDM.2011.6131473. Full Text

Shahrjerdi, D., et al. “High device yield carbon nanotube NFETs for high-performance logic applications.” Technical Digest  International Electron Devices Meeting, Iedm, 2011. Scopus, doi:10.1109/IEDM.2011.6131596. Full Text

Han, S. J., et al. “Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates.” Technical Digest  International Electron Devices Meeting, Iedm, 2010. Scopus, doi:10.1109/IEDM.2010.5703326. Full Text

Franklin, A. D., et al. “Channel and contact length scaling in carbon nanotube transistors.” Device Research Conference  Conference Digest, Drc, 2010, pp. 275–76. Scopus, doi:10.1109/DRC.2010.5551963. Full Text

Franklin, A. D., et al. “Can carbon nanotube transistors be scaled without performance degradation?Technical Digest  International Electron Devices Meeting, Iedm, 2009. Scopus, doi:10.1109/IEDM.2009.5424296. Full Text

Pages