Faculty Profiles

Aaron D. Franklin
Associate Professor of Chemistry
CIEMAS 3473, Durham, NC 27708
(919) 681-9471



Ph.D., Purdue University 2008

B.S.E., Arizona State University 2004

Lin, YC, McGuire, F, and Franklin, AD. "Realizing ferroelectric Hf0.5Zr0.5O2with elemental capping layers." Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 36.1 (January 1, 2018). Full Text

Franklin, AD, Jena, D, and Akinwande, D. "75 Years of the Device Research Conference - A History Worth Repeating (Accepted)." IEEE Journal of the Electron Devices Society (December 5, 2017). Full Text

McGuire, FA, Lin, Y-C, Price, K, Rayner, GB, Khandelwal, S, Salahuddin, S, and Franklin, AD. "Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors." Nano letters 17.8 (August 2017): 4801-4806. Full Text

Andrews, JB, Cao, C, Brooke, MA, and Franklin, AD. "Noninvasive Material Thickness Detection by Aerosol Jet Printed Sensors Enhanced Through Metallic Carbon Nanotube Ink." IEEE Sensors Journal 17.14 (July 15, 2017): 4612-4618. Full Text

Price, KM, Schauble, KE, McGuire, FA, Farmer, DB, and Franklin, AD. "Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition." ACS applied materials & interfaces 9.27 (July 2017): 23072-23080. Full Text

Catenacci, MJ, Flowers, PF, Cao, C, Andrews, JB, Franklin, AD, and Wiley, BJ. "Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites." Journal of Electronic Materials 46.7 (July 2017): 4596-4603. Full Text

Cao, C, Andrews, JB, and Franklin, AD. "Completely Printed, Flexible, Stable, and Hysteresis-Free Carbon Nanotube Thin-Film Transistors via Aerosol Jet Printing." Advanced Electronic Materials 3.5 (May 2017): 1700057-1700057. Full Text

Cox, ND, Cress, CD, Rossi, JE, Puchades, I, Merrill, A, Franklin, AD, and Landi, BJ. "Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation." ACS applied materials & interfaces 9.8 (March 2017): 7406-7411. Full Text

Joh, DY, McGuire, F, Abedini-Nassab, R, Andrews, JB, Achar, RK, Zimmers, Z, Mozhdehi, D, Blair, R, Albarghouthi, F, Oles, W, Richter, J, Fontes, CM, Hucknall, AM, Yellen, BB, Franklin, AD, and Chilkoti, A. "Poly(oligo(ethylene glycol) methyl ether methacrylate) Brushes on High-κ Metal Oxide Dielectric Surfaces for Bioelectrical Environments." ACS applied materials & interfaces 9.6 (February 2017): 5522-5529. Full Text

Han, Q, Bai, Y, Liu, J, Du, K-Z, Li, T, Ji, D, Zhou, Y, Cao, C, Shin, D, Ding, J, Franklin, AD, Glass, JT, Hu, J, Therien, MJ, Liu, J, and Mitzi, DB. "Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes." Energy Environ. Sci. (2017). Full Text


Franklin, AD. "Carbon Nanotube Electronics." Emerging Nanoelectronic Devices. January 27, 2015. 315-335. Full Text

Catenacci, MJ, Flowers, PF, Cao, C, Andrews, JB, Franklin, AD, and Wiley, BJ. "Fully printed memristors from Cu-SiO2core-shell nanowire composites." August 1, 2017. Full Text

Cheng, Z, Price, K, and Franklin, AD. "Edge contacts to multilayer MoS2 using in situ Ar ion beam." August 1, 2017. Full Text

McGuire, FA, Lin, YC, Rayner, B, and Franklin, AD. "MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide." August 1, 2017. Full Text

Cheng, Z, Cardenas, JA, McGuire, F, and Franklin, AD. "Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs." August 22, 2016. Full Text

Franklin, AD, Koswatta, SO, Farmer, D, Tulevski, GS, Smith, JT, Miyazoe, H, and Haensch, W. "Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around." December 1, 2012. Full Text

Franklin, AD, Han, SJ, Tulevski, GS, Luisier, M, Breslin, CM, Gignac, L, Lundstrom, MS, and Haensch, W. "Sub-10 nm carbon nanotube transistor." December 1, 2011. Full Text

Han, SJ, Valdes-Garcia, A, Bol, AA, Franklin, AD, Farmer, D, Kratschmer, E, Jenkins, KA, and Haensch, W. "Graphene technology with inverted-T gate and RF passives on 200 mm platform." December 1, 2011. Full Text